Growth and Si-doping of GaN on GaAs(001) by MBE

Growth and Si-doping of GaN on GaAs(001) by MBE

Author(s):

Publication title:

Fourth International Conference on Thin Film Physics and Applications : 8-11 May 2000, Shanghai, China : proceedings

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4086

Pub. Year:

2000

Page(from):

306

Page(to):

310

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819437297 [0819437298]

Language:

English

Call no.:

P63600/4086

Type:

Conference Proceedings

Details

TDL ID:	ZA00011824
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Thin Film Physics and Applications
Conf. info. (Number):	2000 : 4th
Conf. info. (Venue):	Shanghai, China
Conf. info. (Date):	2000.05.08-2000.05.11

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