Strain Relaxation and Influence of Rsidual Strain in GaAs and (AlGa)As/GaAs Heterostructures Grown on (100) Si by Molecular Beam Epitaxy

Strain Relaxation and Influence of Rsidual Strain in GaAs and (AlGa)As/GaAs Heterostructures Grown on (100) Si by Molecular Beam Epitaxy

Author(s):

Publication title:

Condensed systems of low dimensionality

Title of ser.:

NATO ASI series. Series B, Physics

Ser. no.:

253

Pub. Year:

1991

Page(from):

449

Page(to):

460

Pages:

12

Pub. info.:

New York: Plenum Press

ISBN:

9780306438875 [0306438879]

Language:

English

Call no.:

N11479/253

Type:

Conference Proceedings

Details

TDL ID:	ZA00020950
Series ID:	PA00000015
Conf. info. (Name):	NATO Advanced Research Workshop on Condensed Systems of Low Dimensionality
Conf. info. (Number):	1990
Conf. info. (Venue):	Marmaris, Turkey
Conf. info. (Date):	1990.04.23-1990.04.27

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