![Blank Cover Image](/journaldocs/sites/all/modules/xc/xc_search/images/blank_cover/conference_proceedings.png)
High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
- Author(s):
Zhang, A. P. Dang, G. Ren, F. Cao, X. A. Cho, H. Lambers, E. S. Pearton, S. J. Shul, R. J. Zhang, L. Baca, A. G. Hickman, R. Hove, J. M. Van - Publication title:
- GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 595
- Pub. Year:
- 2000
- Page(from):
- W11.66.1
- Pub. info.:
- Warrendale, Pa.: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995031 [155899503X]
- Language:
- English
- Call no.:
- M23500/595
- Type:
- Conference Proceedings
Similar Items:
MRS-Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
9
![]() Electrochemical Society |
4
![]() MRS-Materials Research Society |
Electrochemical Society |
Materials Research Society |
11
![]() Materials Research Society |
Trans Tech Publications |
Electrochemical Society |