Physical properties of silicon doped heteroepitaxial MOCVD grown GaN: Influence of doping level and stress
- Author(s):
- Publication title:
- GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 595
- Pub. Year:
- 2000
- Page(from):
- W5.9.1
- Pub. info.:
- Warrendale, Pa.: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995031 [155899503X]
- Language:
- English
- Call no.:
- M23500/595
- Type:
- Conference Proceedings
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