Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction

Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction

Author(s):

Zhao, L.

Publication title:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

595

Pub. Year:

2000

Page(from):

W3.3.1

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

Language:

English

Call no.:

M23500/595

Type:

Conference Proceedings

Details

TDL ID:	ZA00020895
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN and Related Alloys
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	1999.11.28-1999.12.03

Similar Items:

1 Conference Proceedings Maskless lateral epitaxial overgrowth of GaN on sapphire Fini, P., Marchand, H., Ibbetson, J. P., Moran, B., Zhao, L., DenBaars, S. P., Speck, J. S., Mishra, U. K. MRS-Materials Research Society	7 Conference Proceedings Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (1011) GaN Templates Chakraborty, Arpan, Onuma, T., Baker, T. J., Keller, S., Chichibu, S. F., DenBaars, S. P., Nakamura, S., Speck, J. S., … Materials Research Society
2 Conference Proceedings MOCVD Growth and Propertics of InGaN/GaN Multi-Quantum Wells Keller,S., Abare,A.C., Minsky,M.S., Wu,X.H., Mack,M.P., Speck,J.S., Hu,E., Coldren,L.A., Mishra,U.K., DenBaars,S.P. Trans Tech Publications	8 Conference Proceedings Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (10-1-1) GaN Templates Chakraborty, Arpan, Onuma, T., Baker, T. J., Keller, S., Chichibu, S. F., DenBaars, S. P., Nakamura, S., Speck, J. S., … Materials Research Society
3 Conference Proceedings Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process Marchand, H., Ibbetson, J. P., Fini, P. T., Wu, X. H., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K. MRS - Materials Research Society	9 Conference Proceedings Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN Arehart, A.R., Poblenz, C., Heying, B., Speck, J.S., Mishra, U.K., DenBaars, S.P., Ringel, S.A. Materials Research Society
4 Conference Proceedings Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Hansen, M., Fini, P., Zhao, L., Abare, A., Coldren, L. A., Speck, J. S., DenBaars, S. P. MRS-Materials Research Society	10 Conference Proceedings Deep levels in n-type schottky and p+ -n homojunction GaN diodes Hierro, A., Kwon, D., Ringel, S. A., Hansen, M., Mishra, U. K., DenBaars, S. P., Speck, J. S. MRS-Materials Research Society
5 Conference Proceedings Substrate Surface Treatments and "Controlled Contamination" in GaN/Sapphire MOCVD Golan, Yuval, Fini, Paul, DenBaars, Steven P., Speck, James S. MRS - Materials Research Society	11 Conference Proceedings Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD DenBaars, S. P., Keller, S., Keller, B. P., Wu. Y. F., Kapolnek, D., Mishra, U. K. MRS - Materials Research Society
6 Conference Proceedings Electrical transport of an AlGaN/GaN two-dimensional electron gas Saxler, A., Debray, P., Perrin, R., Elhamri, S., Mitchel, W. C., Elsass, C. R., Smorckkova, I. P., Heying, B., Haus, E., … MRS-Materials Research Society	12 Conference Proceedings Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells Cho, Y-H., Schmidt, T. J., Bidnyk, S., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12