Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells

Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells

Author(s):

Bidnyk,S. ( Oklahoma State Univ. )

Publication title:

Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3625

Pub. Year:

1999

Page(from):

68

Page(to):

77

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819430953 [0819430951]

Language:

English

Call no.:

P63600/3625

Type:

Conference Proceedings

Details

TDL ID:	ZA00020862
Series ID:	PA00000029
Conf. info. (Name):	Photonics West : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	1999 : 7th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1999.01.25-1999.01.29

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