Characterization of InGaN/AlGaN multiple-quantum-well laser diodes
- Author(s):
Kneissl,M. ( Xerox Palo Alto Research Ctr. ) Bour,D.P. Romano,L.T. Hofstetter,D. McCluskey,M.D. Dunnrowicz,C.J. Teepe,M. Wood,R.M. Johnson,N.M. - Publication title:
- Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3625
- Pub. Year:
- 1999
- Page(from):
- 12
- Page(to):
- 18
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819430953 [0819430951]
- Language:
- English
- Call no.:
- P63600/3625
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
8
Conference Proceedings
Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
MRS - Materials Research Society |
MRS - Materials Research Society |
9
Conference Proceedings
Materials Characterization on Optically Pumped InGaN/GaN Lasers by Far-Field Measurements and Fourier Analysis of the Emission Spectrum
MRS - Materials Research Society |
4
Conference Proceedings
Characterization of AlGalnN heterostructures and laser diodes (Invited Paper)
SPIE-The International Society for Optical Engineering |
10
Conference Proceedings
Advances in laser diode development for high resolution and high-speed printing
SPIE - The International Society for Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
6
Conference Proceedings
Material characterization for III-nitride-based light emitters (Invited Paper)
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |