Imdependent tunneling reductions relative to homogeneous oxide dielectrics from i)Nitrided interfaces, and ii) Physically-thicker stacked oxide/nitride and oxide/oxynitride gate dielectrics

Imdependent tunneling reductions relative to homogeneous oxide dielectrics from i)Nitrided interfaces, and ii) Physically-thicker stacked oxide/nitride and oxide/oxynitride gate dielectrics

Author(s):

Publication title:

Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

592

Pub. Year:

2000

Page(from):

317

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995000 [1558995005]

Language:

English

Call no.:

M23500/592

Type:

Conference Proceedings

Details

TDL ID:	ZA00020837
Series ID:	PA00000011
Conf. info. (Name):	Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.29-1999.12.01

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