From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide

From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide

Author(s):

Publication title:

Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

592

Pub. Year:

2000

Page(from):

201

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995000 [1558995005]

Language:

English

Call no.:

M23500/592

Type:

Conference Proceedings

Details

TDL ID:	ZA00020837
Series ID:	PA00000011
Conf. info. (Name):	Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.29-1999.12.01

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