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Precise characterization of ultrathin nitride/oxide gate dielectrics by grazing X-ray reflectance and spectroscopic ellipsometry

Author(s):
Publication title:
Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
592
Pub. Year:
2000
Page(from):
63
Pub. info.:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995000 [1558995005]
Language:
English
Call no.:
M23500/592
Type:
Conference Proceedings

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