Blank Cover Image

Strain relaxation during solid-phase epitaxial crystallisation of GexSi1-x alloy layers with depth dependent Ge compositions

Author(s):
Publication title:
Crystallization and related phenomena in amorphous materials : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
321
Pub. Year:
1994
Page(from):
491
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992207 [1558992200]
Language:
English
Call no.:
M23500/321
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings SOLID-PHASE EPITAXIAL CRYSTALLISATION OF GexSi1-x ALLOY LAYERS

Elliman, Robert G., Wong, Wah-Chung, Kringhoj, Per

MRS - Materials Research Society
7 Conference Proceedings ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF GeXSi1-X/Si HETEROSTRUCTURES

Elliman, R.G., Ridgway, M.C., Williams, J.S.

Materials Research Society
2 Conference Proceedings Solid-phase epitaxial crystallisation of GexSi1-x alloy layers

Elliman, Robert G., Wong, Wah-Chung, Kringhoj, Per

MRS - Materials Research Society
8 Conference Proceedings CoSi2 FORMATION ON STRAINED GexSi1-x LAYERS BY Co/GexSi1-x THERMAL REACTION

Ridgway, M. C., Elliman, R. G., Pascual, R., Whitton, J. L., Baribeau, J. -M.

MRS - Materials Research Society
3 Conference Proceedings Strain Relaxation During Epitaxial Crystallization of Ge.Si1-x Alloy Layers Produced by Ion-Implantation

Elliman,R.G., Wong,W.C.

Trans Tech Publications
9 Conference Proceedings The infiluence of metallic contamination on the lat-tice relaxation of GexSi1-x epitaxial alloys

Higgs,V, Davies,G, Kubiak,R

Trans Tech Publications
4 Conference Proceedings The effect of strain and strain-gradients on the crystallisation kinetics of Si1-xGex alloy layers

Kringhoj, Per, Elliman, Robert G., Hansen, John L.

MRS - Materials Research Society
10 Conference Proceedings Investigation of Composition-dependent Optical Phonon Modes in AlxGa₁₋xN Epitaxial Layers Grown on Sapphire Substrates

Jun-Rong Chen, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang

Materials Research Society
5 Conference Proceedings The Fabrication of High-Speed Electronic Devices by Ion-Beam Synthesis of GexSi1-x Strained Layers

Elliman, R. G., Jiang, H., Wong, W. C., Kringhoj, P.

MRS - Materials Research Society
11 Conference Proceedings SOLID PHASE EPITAXY OF GexSi1-x ALLOYS ON (100) Si

Hong, Q.Z., Revesc, P., Yu, A..J., Mayer, J.W., Poate, J.M., Bean, J.C., Eaglesham, D.J.

Materials Research Society
6 Conference Proceedings The Effect of Ion-Implantation-Induced Defects on Strain Relaxation in GexSi1-x/Si Heterostructures

Glasko, J. M., Zou, J., Cockayne, D. J. H., Gerald, J. Fitz, Kringhoj, P., Elliman, R. G.

MRS - Materials Research Society
12 Conference Proceedings EXPERIMENTAL AND THEORETICAL ANALYSIS OF STRAIN RELAXATION IN GeXSi1-X/Si(100) HETEROEPITAXY

Hull, R., Bean, J. C.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12