Dopant activation and epitaxial regrowth in p-implanted pseudomorphic Ge0.12Si0.88 layers on Si(100)

Dopant activation and epitaxial regrowth in p-implanted pseudomorphic Ge0.12Si0.88 layers on Si(100)

Author(s):

Lie, D. Y. C.

Publication title:

Crystallization and related phenomena in amorphous materials : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

321

Pub. Year:

1994

Page(from):

485

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992207 [1558992200]

Language:

English

Call no.:

M23500/321

Type:

Conference Proceedings

Details

TDL ID:	ZA00020792
Series ID:	PA00000011
Conf. info. (Name):	Symposium on crystallization and related phenomena in amorphous materials
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

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