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Enhancement of the METAL/Si-DOPED AlGaAs schottky barrier height by CH4/H2 reactive ion etching

Author(s):
Pereira, R.
Hove, M. Van
Raedt, W. De
Alay, J.
Bender, H.
Vandervorst, W.
Borghs, G.
Rossum, M. Van
3 more
Publication title:
III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
300
Pub. Year:
1993
Page(from):
211
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558991965 [1558991964]
Language:
English
Call no.:
M23500/300
Type:
Conference Proceedings

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