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MOCVD Growth of High Output Power InGaN Multiple-Quantum-Well Light-Emitting Diode

Author(s):
Kozodoy, P.
Abare, A.
Sink, R. K.
Mack, M.
Keller, S.
DenBaars, S. P.
Mishra, U. K.
Steigerwald, D.
3 more
Publication title:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
468
Pub. Year:
1997
Page(from):
481
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
Language:
English
Call no.:
M23500/468
Type:
Conference Proceedings

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