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Characterization of AlxGa1-xN Films Prepared by Plasma-Induced Molecular-Beam Epitaxy on c-Plane Sapphire

Author(s):
Angerer, H.
Ambacher, O.
Stutzmann, M.
Metzger, T.
Hopler, R.
Born, E.
Bergmaier, A.
Dollinger, G.
3 more
Publication title:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
468
Pub. Year:
1997
Page(from):
305
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
Language:
English
Call no.:
M23500/468
Type:
Conference Proceedings

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