Observation of Vacancy Clustering in Si Crystals during In Situ Electron Irradiation in a High Voltage Electron Microscope

Observation of Vacancy Clustering in Si Crystals during In Situ Electron Irradiation in a High Voltage Electron Microscope

Author(s):

Publication title:

In situ electron and tunneling microscopy of dynamic processes : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

404

Pub. Year:

1996

Page(from):

189

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993075 [155899307X]

Language:

English

Call no.:

M23500/404

Type:

Conference Proceedings

Details

TDL ID:	ZA00020774
Series ID:	PA00000011
Conf. info. (Name):	Symposium on in situ electron and tunneling microscopy of dynamic processes
Conf. info. (Number):	1995
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.11.30

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