Blank Cover Image

Determination of technological process-induced variations of silicon recombination parameters by infrared and microwave absorption

Author(s):
Publication title:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2648
Pub. Year:
1995
Page(from):
65
Page(to):
71
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819420213 [0819420212]
Language:
English
Call no.:
P63600/2648
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Peculiarities of Determination of Recombination Parameters at Moderate and High Excitation Levels in Silicon Wafers

Gaubas, E., Kaniava, A.

MRS - Materials Research Society
7 Conference Proceedings The Impact of Processing-Induced Defects on the Electrical Characteristics and the Degradation of Si n+p Junctions

Simoen, E., Vanhellemont, J., Kaniava, A., Claeys, C.

Electrochemical Society
2 Conference Proceedings Investigation of Recombination Parameters in Ion Implanted Layer-Substrate Si Structures

Gaubas, E., Jarasiunas, K., Kaniava, A., Vaitkus, J.

MRS - Materials Research Society
8 Conference Proceedings Determination of technological parameters in strip mining by time of flight and image processing

Elandaloussi,F., Muller,B., Osten,W.

SPIE - The International Society for Optical Engineering
3 Conference Proceedings IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quality

Kaniava, A., Menczigar, U., Vanhellemont, J., Poortmans, J., Rotondaro, A. L. P., Gaubas, E., Vaitkus, J., Koster, L., …

MRS - Materials Research Society
9 Conference Proceedings Comparative Study of Camer Lifetime Variations with Doping in Si and Ge

J. Vanhellemont, E. Gaubas

Electrochemical Society
4 Conference Proceedings On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

Vanhellemont, J., Kaniava, A., Libezny, M., Simoen, E., Kissinger, G., Gaubas, E., Claeys, C., Clauws, P.

MRS - Materials Research Society
10 Conference Proceedings Technological Process Induced Defects in Epitaxial Silicon : Photoluminescence and Structural Studies

Giri, P.K., Panigrahi, B.K., Nair, G.M.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Monitoring of Neutron Transmutation Doped Silicon Recombination Properties by Microwave Absorption Transient Techniques

Gaubas, E., Vanhellemont, J., Simoen, E., Claeys, C., Clauws, P., Kraner, H.W., Vilkelis, G.

Electrochemical Society
11 Conference Proceedings Formation of SiOx Precipitates in Technological Silicon Wafers during Heating Processes:Investigations with Infrared Spectroscopy

Hild,E., Nouredin,S., Kormany,T.

Trans Tech Publications
6 Conference Proceedings ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED EXTENDED DEFECTS IN SILICON

Vanhellemont, J., Simoen, E., Bosman, G., Claeys, C., Kaniava, A., Gaubas, E., Blondeel, A., Clauws, P.

Electrochemical Society
12 Conference Proceedings Collision-Induced Absorption in the Microwave Region

Dagg R. I.

Plenum Press
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12