Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD

Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD

Author(s):

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

1255

Page(to):

1258

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy Toth, L., Pecz, B., Czigany, Zs., Amimer, K., Georgakilas, A. Trans Tech Publications	7 Conference Proceedings The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120)Sapphire Versus Pressure and Temperature Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E. Materials Research Society
2 Conference Proceedings Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire Tiginyanu, I. M., Kravetsky, I. V., Pavlidis, D., Eisenbach, A., Hildebrandt, R., Marowsky, G., Hartnagel, H. L. MRS-Materials Research Society	8 Conference Proceedings Effect of Growth Temperature on the Microstructure of the Nucleation Layers of GaN Grown by MOCVD on (1120) Sapphire Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E. Materials Research Society
3 Conference Proceedings Structural Characterization of Wurtzite Al₁₋xInxN (0.1 T. Seppänen, P.O.Å. Persson, G.Z. Radnóczi, B. Pécz, L. Hultman, J. Birch Society of Vacuum Coaters	9 Conference Proceedings Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN Osinski,M., Eliseev,P.G., Lee,J., Smagley,V.A., Sugahara,T., Sakai,S. SPIE - The International Society for Optical Engineering
4 Conference Proceedings Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire Niebuhr, R., Bachem, K. H., Behr, D., Hoffmann, C., Kaufmann, U., Lu, Y., Santic, B., Wagner, J., Arlery, M., Rouviere, … MRS - Materials Research Society	10 Conference Proceedings Optical properties of GaN layers grown by MOCVD Kudrawiec,R., Bryja,L., Misiewicz,J., Paszkiewicz,R., Korbutowicz,R., Panek,M., Paszkiewicz,H., Tlaczala,M.J. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane M. Bosi, G. Attolini, B. Pécz, Z. Zolnai, L. Dobos Trans Tech Publications	11 Conference Proceedings Effects of the Al composition in AIGaN buffer layer on a-plane GaN films grown on r-plane sapphire substrate by MOCVD Q. Zhang, Z. H. Wu, J. Dai, L. Zhang, Q. He Society of Photo-optical Instrumentation Engineers
6 Conference Proceedings Characterization of GaAlN/GaN Superlattice Heterostructures Makkai, Z., Pecz, B., di Forte-Poisson, M.A., Huet, F. Trans Tech Publications	12 Conference Proceedings THERMAL BEHAVIOUR OF Au/Pd/GaAs CONTACTS Pecz, B., Veresegyhazy, R., Mojzes, I., Radnoczi, G., Sulyok, A., Malina, V. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12