The Atomic Structure of Prismatic Planar Defects in GaN/AIN Grown over Silicon Carbide and Sapphire Substrates

The Atomic Structure of Prismatic Planar Defects in GaN/AIN Grown over Silicon Carbide and Sapphire Substrates

Author(s):

Nouet,G.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

1247

Page(to):

1250

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings The Atomic Structure of the {1010} Inversion Domains in GaN/Sapphire Layers Potin, V., Ruterana, P., Nouet, G., Salvador, A., Morkoc, H. MRS - Materials Research Society	7 Conference Proceedings The atomic structure of extended defects in GaN Ruterana, P., Nouet, G. MRS-Materials Research Society
2 Conference Proceedings HREM and CBED Studies of Polarity of Nitride Layers With Prismatic Defects Grown Over SiC Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., Morkoc, H. MRS - Materials Research Society	8 Conference Proceedings The Structure of Threading Dislocations Generated at the GaN/Al2O3 Interface Ruterana,P., Potin,V., Nouet,G. Trans Tech Publications
3 Conference Proceedings Amorphous Domains in GaN Layers Grown on 6H-SiC by MBE Vermaut, P., Potin, V., Ruterana, P., Hairie, A., Nouet, G., Salvador, A., Morkoc, H. MRS - Materials Research Society	9 Conference Proceedings Modified Stillinger-Weber Potential for Planar Defects Modeling in GaN Bere,A., Vermaut,P., Hairie,A., Paumier,E., Ruterana,P., Nouet,G. Trans Tech Publications
4 Conference Proceedings The Atomic Structure of Tilt Grain Boundaries in AIN/GaN Layers Grown on(0001)Sapphire:A Case Study,the ｦｲ31(11470)Symmetric Grain Boundary Potin,V., Bere,A., Ruterana,P., Nouet,G. Trans Tech Publications	10 Conference Proceedings Structure of the 2H-AlN/6H-SiC Interface Vermaut, P., Ruterana, P., Nouet, G., Morkoc, H. MRS - Materials Research Society
5 Conference Proceedings The Core Structure of Pure Edge Threading Dislocations in GaN Layers Grown on (0001)SiC or Sapphire by MBE Ruterana, P., Potin, V., Nouet, G. MRS - Materials Research Society	11 Conference Proceedings The Atomic Structure of Mosaic Grain Boundary Dislocations in GaN Epitaxial Layers Nouet, G., Pond, R. C., Potin, V., Ruterana, P. Materials Research Society
6 Conference Proceedings Low-Angle and High-Angle Grain Boundaries in AlN/GaN Layers Grown on (0001) Sapphire by MBE Potin, V., Ruterana, P., Hairie, A., Nouet, G. MRS - Materials Research Society	12 Conference Proceedings Analysis of the Interfacial Relationship in GaN/(0001)Al2O3 Layers Barbaray,B., Potin,V., Ruterana,P., Nouet,G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12