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Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001)by Plasma-Assisted Molecular Beam Epitaxy

Author(s):
Yang,B.
Brandt,O.
Zhang,Y.G.
Li,A.Z.
Jenichen,B.
Paris,G.
Ploog,K.H.
2 more
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. Year:
1998
Vol.:
Part2
Page(from):
1235
Page(to):
1238
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497928 [0878497927]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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