Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor

Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor

Author(s):

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

1085

Page(to):

88

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs) A. Takatsuka, Y. Tanaka, K. Yano, N. Matsumoto, T. Yatsuo Trans Tech Publications	7 Conference Proceedings Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications
2 Conference Proceedings 980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors A. Takatsuka, Y. Tanaka, K. Yano, T. Yatsuo, K. Arai Trans Tech Publications	8 Conference Proceedings 4H-SiC p-Channel MOSFETs with Epi-Channel Structure M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai Trans Tech Publications
3 Conference Proceedings Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs) K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, K. Arai Trans Tech Publications	9 Conference Proceedings Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices M. Okamoto, M. Iijima, T. Yatsuo, K. Fukuda, H. Okumura Trans Tech Publications
4 Conference Proceedings Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs) A. Takatsuka, Y. Tanaka, K. Yano, T. Yatsuo, K. Arai Trans Tech Publications	10 Conference Proceedings Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC R. Kosugi, T. Sakata, Y. Sakuma, K. Suzuki, T. Yatsuo Trans Tech Publications
5 Conference Proceedings Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Statie Induction Transistors (BG-SITs) K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto Trans Tech Publications	11 Conference Proceedings SiC Zener Diode for Gate Protection of 4.5 kV SiCGT K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications
6 Conference Proceedings Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode A. Kinoshita, T. Nishi, T. Ohyanagi, T. Yatsuo, K. Fukuda Trans Tech Publications	12 Conference Proceedings Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Tsuehida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K., Sugawara, Y. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12