Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing
- Author(s):
- Publication title:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 264-268
- Pub. Year:
- 1998
- Vol.:
- Part2
- Page(from):
- 869
- Page(to):
- 872
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497928 [0878497927]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Effect of NO on the Electrical Characteristics of SiO2 Grown on p-Type 4H SiC
MRS - Materials Research Society |
Electrochemical Society |
Trans Tech Publications |
8
Conference Proceedings
Physical and electrical properties of thin dielectrics prepared by photoassisted growth in an NO environment
SPIE - The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
Electrochemical Society |
MRS - Materials Research Society |
10
Conference Proceedings
Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
6
Conference Proceedings
DIELECTRICS ON SILICON THERMALLY GROWN OR ANNEALED IN A NITROGEN RICH ENVIRONMENT
MRS - Materials Research Society |
12
Conference Proceedings
Combined Thermal and UV Growth of Thin Dielectrics on Silicon in an NO Environment
MRS - Materials Research Society |