Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

Author(s):

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

861

Page(to):

864

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications	7 Conference Proceedings Oxidation of Silicon Carbide: Problems and Solutions Afanas'ev, V.V., Bassler, M., Pensl, G., Stesmans, A. Trans Tech Publications
2 Conference Proceedings Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications	8 Conference Proceedings Oxidation of Silicon Carbide: Problems and Solutions Afanas'ev, V.V., Bassler, M., Pensl, G., Stesmans, A. Trans Tech Publications
3 Conference Proceedings Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Ciobanu, F., Pensl, G., Afanas'ev, V., Schoner, A. Trans Tech Publications	9 Conference Proceedings SiC/SiO2 interface defects Afanas'ev, V. V. Kluwer Academic Publishers
4 Conference Proceedings Traps at the SiC/SiO2-Interface Pensl, Gerhard, Bassler, Michael, Ciobanu, Florin, Afanas'ev, Valeri, Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, … Materials Research Society	10 Conference Proceedings Physics of SiC Processing Pensl, G., Afanas'ev, V. V., Bassler, M., Frank, T., Laube, M., Weidner, M. Trans Tech Publications
5 Conference Proceedings SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications	11 Conference Proceedings Electron spin resonance features of the Pb1 interface defect in thermal(100)Si/SiO2 Stesmans,A., Afanas'ev,V.V. Trans Tech Publications
6 Conference Proceedings Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Ciobanu, F., Frank, T., Pensl, G., Afanas'ev, V., Shamuilia, S., Schoner, A., Kimoto, T. Trans Tech Publications	12 Conference Proceedings High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface Mattern,B., Bassler,M., Pensl,G., Ley,L. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12