Sputter-Etching as a Surface Preparation Technique for Schottky Contacts

Sputter-Etching as a Surface Preparation Technique for Schottky Contacts

Author(s):

Kinouchi,S.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

821

Page(to):

824

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode Ohtsuka, K., Sugimoto, H., Kinouchi, S., Tarui, Y., Imaizumi, M., Takami, T., Ozeki, T. Trans Tech Publications	7 Conference Proceedings Switching Characteristics of SiC-MOSFET and SBD Power Modules Imaizumi, M., Tarui, Y., Kinouchi, S., Nakatake, H., Nakao, Y., Watanabe, T., Fujihira, K., Miura, N., Takami, T., … Trans Tech Publications
2 Conference Proceedings Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode Ohtsuka, K., Sugimoto, H., Kinouchi, S.I., Tarui, Y., Imaizumi, M., Takami, T., Ozeki, T. Trans Tech Publications	8 Conference Proceedings Reactive Ion Etching in CF4/O2 Gas Mixtures for Fabricating SiC Devices Imaizumi, M., Tarui, Y., Sugimoto, H., Tanimura, J., Takami, T., Ozeki, T. Trans Tech Publications
3 Conference Proceedings Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC Sugimoto, H., Kinouchi, S., Tarui, Y., Imaizumi, M., Ohtsuka, K., Takami, T., Ozeki, T. Trans Tech Publications	9 Conference Proceedings Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability Fujihira, K., Tarui, Y., Ohtsuka, K. I., Imaizumi, M., Takami, T. Trans Tech Publications
4 Conference Proceedings Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs Imaizumi, M., Tarui, Y., Sugimoto, H., Ohtsuka, K., Takami, T., Ozeki, T. Trans Tech Publications	10 Conference Proceedings Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET Tarui, Y., Watanabe, T., Fujihira, K., Miura, N., Nakao, Y., Imaizumi, M., Sumitani, H., Takami, T., Ozeki, T., Oomori, … Trans Tech Publications
5 Conference Proceedings Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET Ohtsuka, K., Tarui, Y., Imaizumi, M., Sugimoto, H., Takami, T., Ozeki, T. Trans Tech Publications	11 Conference Proceedings Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer K. Ohtsuka, Y. Tarui, T. Watanabe, K. Fujihira, Y. Matsuno Trans Tech Publications
6 Conference Proceedings Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs Imaizumi, M., Tarui, Y., Sugimoto, H., Ohtsuka, K., Takami, T., Ozeki, T. Trans Tech Publications	12 Conference Proceedings Study of GaSb Schottky contacts Y.K. Su, H. Kuan, P.H. Chang, S.W. Chiou Society of Photo-optical Instrumentation Engineers

1

2

3

4

5

6

7

8

9

10

11

12