Analysis of Aluminum Ion Implantation Damage into 6H-SiC Epilayers

Analysis of Aluminum Ion Implantation Damage into 6H-SiC Epilayers

Author(s):

Mestres,N.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

733

Page(to):

736

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC Mestres, N., Alsina, F., Campos, F. J., Pascual, J., Morvan, E., Godignon, P., Millan, J. Trans Tech Publications	7 Conference Proceedings Roughness effects in the infrared reflectance of thick 3C-SiC films grown on Si substrates Pascual,J., Mekki,M.Ben el, Arnaud,G., Camassel,J. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Damage Reduction in Channeled Ion Implanted 6H-SiC Morvan, E., Mestres, N., Campos, F. J., Pascual, J., Anders, Hallen, Linnarsson, M. K., Kuznetsov, A. Yu. Trans Tech Publications	8 Conference Proceedings Energy Order Effect of Aluminum Multiple Implantation in 6H-SiC Ottaviani,L., Morvan,E., Locatelli,M.L., Godignon,P., Chante,J.P. Trans Tech Publications
3 Conference Proceedings Infrared Investigation of Implantation Damage in 6H-SiC Camassel, J., Wang, H., Pernot, J., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications	9 Conference Proceedings 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Montserrat, J., Millan, J. Trans Tech Publications
4 Conference Proceedings Infrared Investigation of Implantation Damage in 6H-SiC Camassel, J., Wang, H., Pernot, J., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications	10 Conference Proceedings 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Perez-Tomas, A., Tournier, D., Godignon, P., Mestres, N., Millan, J. Trans Tech Publications
5 Conference Proceedings Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC Blanque, S., Perez, R., Zielinski, M., Pernot, J., Mestres, N., Pascual, J., Godignon, P., Camassel, J. Trans Tech Publications	11 Conference Proceedings Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals Blanque, S., Perez, R., Godignon, P., Mestres, N., Morvan, E., Kerlain, A., Dua, C., Brylinski, C., Zielinski, M., … Trans Tech Publications
6 Conference Proceedings SiC Base Micro-Probe for Myocardial Ischemia Monitoring Pascual, J., Valvo, F., Godignon, P., Aguilo, J., Millan, J., Camassel, J., Mestres, N. Trans Tech Publications	12 Conference Proceedings Tuning the Terrace and Step Stability of 6H-SiC (0001) for Graphene Film Deposition G. Rius, N. Mestres, O. Eryu, P. Godignon Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12