Raman,Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiC

Raman,Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiC

Author(s):

Thomas,P.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

725

Page(to):

728

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping Terziyska, P., Pernot, J., Contreras, S., Robert, J.L., Di Cioccio, L., Billon, T. Trans Tech Publications	7 Conference Proceedings Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates J.W. Sun, T. Robert, V. Jokubavicius, S. Juillaguet, R. Yakimova Trans Tech Publications
2 Conference Proceedings 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments Robert, J.-L., Contreras, S., Camassel, J., Pernot, J., Juillaguet, S., Di Cioccio, L., Billon, T. Trans Tech Publications	8 Conference Proceedings Infrared Investigation of Implantation Damage in 6H-SiC Camassel, J., Wang, H., Pernot, J., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications
3 Conference Proceedings 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments Robert, J.-L., Contreras, S., Camassel, J., Pernot, J., Juillaguet, S., Di Cioccio, L., Billon, T. Trans Tech Publications	9 Conference Proceedings Infrared Investigation of Implantation Damage in 6H-SiC Camassel, J., Wang, H., Pernot, J., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications
4 Conference Proceedings Raman Investigation of Aluminum-Doped 4H-SiC S. Juillaguet, P. Kwasnicki, H. Peyre, L. Konczewicz, S. Contreras Trans Tech Publications	10 Conference Proceedings Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications H. Peyre, J. Sun, J. Guelfucci, S. Juillaguet, J. Hassan Trans Tech Publications
5 Conference Proceedings From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks Pernot, J., Camassel, J., Peyre, H., Contreras, S., Robert, J.L. Trans Tech Publications	11 Conference Proceedings Electrical Properties of p-Type In Situ Doped vs. Al-Implanted 4H-SiC Pernot, J., Contreras, S., Camassel, J., Robert, J. L. Trans Tech Publications
6 Conference Proceedings Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method Contreras, S., Zielinski, M., Konczewicz, L., Blanc, C., Juillaguet, S., Muller, R., Kunecke, U., Wellmann, P.J., … Trans Tech Publications	12 Conference Proceedings Al and Al/C High Dose Implantation in 4H-SiC Bluet, J. M., Pernot, J., Billon, T., Contreras, S., Michaud, J. F., Robert, J. L., Camassel, J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12