Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy
- Author(s):
Frank,T. Troffer,T. Pensl,G. Nordell,N. Karlsson,S. Schoner,A. - Publication title:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 264-268
- Pub. Year:
- 1998
- Vol.:
- Part2
- Page(from):
- 681
- Page(to):
- 684
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497928 [0878497927]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces
Trans Tech Publications |
11
Conference Proceedings
Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |