Theory of the NiH2 Complex in Si and the CuH2 Complex in GaAs

Author(s):

• Jones,R.
• Goss,J.
• Oberg,S.
• Briddon,P.R.
• Resende,A.

Publication title:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

Title of ser.:

Materials science forum

Ser. no.:

196-201

Pub. Year:

1995

Pt.:

2

Page(from):

921

Page(to):

926

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings