Optical Absorption due to Vibration of Hydrogen-Oxygen Pairs in Silicon
- Author(s):
- Publication title:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- Title of ser.:
- Materials science forum
- Ser. no.:
- 196-201
- Pub. Year:
- 1995
- Pt.:
- 2
- Page(from):
- 915
- Page(to):
- 920
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Me0tastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon
Trans Tech Publications |
8
Conference Proceedings
< 100 >and< 111 >configurations of iron-acceptor pairs in silicon related to stable and metastable states
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Emission and capture kinetics for a hydrogen-related negative-U center in silicon:evidence for metastable neutral charge state
Trans Tech Publications |
MRS - Materials Research Society |
6
Conference Proceedings
Optical absorption due to hydrogen bound to interstitial Si in Si crystal grown in hydrogen atmosphere
Trans Tech Publications |
12
Conference Proceedings
Positron-Annihilation 2D-ACAR Study of Divacancy and Vacancy-Oxygen Pairs in Si
Trans Tech Publications |