SEMI-INSULATING BEHAVIOR IN UNDOPED LEC InP AFTER ANNEALING IN PHOSPHORUS.

SEMI-INSULATING BEHAVIOR IN UNDOPED LEC InP AFTER ANNEALING IN PHOSPHORUS.

Author(s):

Publication title:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

Title of ser.:

Materials science forum

Ser. no.:

10-12

Pub. Year:

1986

Vol.:

Part3

Page(from):

1259

Page(to):

1264

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020682
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors - ICDS
Conf. info. (Number):	14th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1986.08.18-1986.08.22

Similar Items:

1 Conference Proceedings TRIPLET SPIN ODMR FROM PHOSPHORUS ANTISITES IN UNDOPED InP. KENNEDY,T.A., WILSEY,N.D., KLEIN,P.B., HENRY,R.L. Trans Tech Publications	7 Conference Proceedings ODMR OF SHALLOW DONORS IN Zn-DOPED LEC-GROWN InP Trombetta, J.M., Kennedy, T.A Materials Research Society
2 Conference Proceedings PHOTOLUMINESCENCE STUDY OF Fe2+ IN InP1-xAsx:Fe ALLOYS. KLEIN,P.B., BISHOP,S.G., HENRY,R.L., KRIMAN,A.M., WILSEY,N.N.D. Trans Tech Publications	8 Conference Proceedings EL2 RELATED ANOMALOUS SPLITTING IN THE PHOTOREFLECTANCE RESPONSE OF SEMI-INSULATING GaAs Durbin, C., Estreta, J., Glosser, R., Duncan, W.., Henry, R. L., Nordquist, P., Bottka, N., Gaskill, D. K Materials Research Society
3 Conference Proceedings High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy Fang, Z-Q., Claflin, B.B., Look, D.C., Myers, T.H., Koleske, D.D., Wickenden, A.E., Henry, R.L. Materials Research Society	9 Conference Proceedings Defects in neutron-irradiated LEC semi-insulating-GaAs Jones,B.K., Santana,J.M., Sloan,T. Trans Tech Publications
4 Conference Proceedings Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC A. Gallstrorm, B. Magnusson, P. Carlsson, N.T. Son, A. Henry, F. Beyer, M. Syvajarvi, R. Yakimova, E. Janzen Trans Tech Publications	10 Conference Proceedings Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals Kennedy,T.A., Glaser,E.R., Klein,P.B., Bhargava,R.N. Trans Tech Publications
5 Conference Proceedings SEMI-INSULATING BEHAVIOR OF UNDOPED InP Kainosho, K., Oda, O., Hirt, G., Muller, G. MRS - Materials Research Society	11 Conference Proceedings Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates N.Y. Garces, E.R. Glaser, W.E. Carlos, M.A. Fanton Trans Tech Publications
6 Conference Proceedings *ELECTRON PARAMAGNETIC RESONANCE OF INTRINSIX DEFECTS IN III-V SEMECONDUCTORS Wilsey, N. D.,, Kennedy, T. A Materials Research Society	12 Conference Proceedings Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals Anderson, T. A., Barrett, D. L., Chen, J., Emorhokpor, E., Gupta, A., Hopkins, R. H., Souzis, A. E., Tamer, C. D., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12