CHALCOGEN DOUBLE DONORS IN SILICON.

CHALCOGEN DOUBLE DONORS IN SILICON.

Author(s):

Publication title:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

Title of ser.:

Materials science forum

Ser. no.:

10-12

Pub. Year:

1986

Vol.:

Part3

Page(from):

911

Page(to):

916

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020682
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors - ICDS
Conf. info. (Number):	14th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1986.08.18-1986.08.22

Similar Items:

1 Conference Proceedings HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON Pensl, G., Roos, G., Stolz, P., Johnson, N. M., Holm, C. Materials Research Society	7 Conference Proceedings Reorientation of stress induced alignment of thermal double donors in silicon Wagner,P., Hage,J., Trombetta,J.M., Watkins,G.D. Trans Tech Publications
2 Conference Proceedings Selenium and Tellurium Double Donors in SiC S.A. Reshanov, H.B. Weber, G. Pensl, A. Schoener, H. Nagasawa Trans Tech Publications	8 Conference Proceedings An investrgatlon of the 78/2O3 meV double accep-tor in GaAs includmg the effects of hydrogen pas-sivation Addinall,R, Newman,RC, Gotz,W, Roos,G, Pensl,G, Hope,DA Trans Tech Publications
3 Conference Proceedings Electronic Raman Studies of Shallow Donors in Silicon Carbide Pusche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G., Desperrier, P., Wellmann, P.J., Haller, E.E., Ager, … Trans Tech Publications	9 Conference Proceedings Effect of Carbon on Thermal Double Donor Formation in Silicon Murin,L.I., Markevich,V.P. Trans Tech Publications
4 Conference Proceedings DONOR REACTIVATION KINETICS AND HYDROGEN REDISTRIBUTION IN THE SPACE CHARGE LAYER OF N-TYPE SILICON Wu, Y.-A., Roos, G., Johnson, N. M., Herring C. Materials Research Society	10 Conference Proceedings Nitrogen Donors,Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide(4H-SiC) Gotz,W., Schoner,A., Suttrop,W., Pensl,G., Choyke,W.J., Stein,R.A., Leibenzeder,S. Trans Tech Publications
5 Conference Proceedings INFRARED STUDIES OF THE DOUBLE ACCEPTOR ZINC IN SILICON Dornen, A., Kienle, R., Thonke, K., Stolz, P., Pensl, G., Grunebau, D., Stolwijk, N.A. Materials Research Society	11 Conference Proceedings Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500｡？in Czochralski-Grown Si Gotz,W., Pensl,G., Zulehner,W. Trans Tech Publications
6 Conference Proceedings The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers Newman,R.C., Davidson,B.R., Addinall,R., Murray,R., Emmert,J.W., Wagner,J., Gotz,W., Roos,G., Pensl,G. Trans Tech Publications	12 Conference Proceedings Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs Roos,G., Johnson,N.M., Herring,C., Harris,J.S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12