ON THE INFLUENCE OF DOPING AND ANNEALING ON OXYGEN-RELATED DEFECTS IN SILICON.

Author(s):

• MASCHER,P.
• DANNEFAER,S.
• KERR,D.
• HAHN,S.

Publication title:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

Title of ser.:

Materials science forum

Ser. no.:

10-12

Pub. Year:

1986

Vol.:

Part3

Page(from):

869

Page(to):

874

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings