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Formation mechanism of defects in annealed lnP

Author(s):
  • Han,Y. ( Institute of Semiconductors (China) )
  • Liu,X. ( Institute of Semiconductors (China) )
  • Jiao,J. ( Institute of Semiconductors (China) )
  • Lin,L. ( Institute of Semiconductors (China) )
Publication title:
Optoelectronic Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3419
Pub. Year:
1998
Page(from):
346
Page(to):
353
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819428738 [0819428736]
Language:
English
Call no.:
P63600/3419
Type:
Conference Proceedings

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