Blank Cover Image

Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD

Author(s):
Wang,J. ( Univ.of Tokushima (Japan) )
Tottori,S. ( Univ.of Tokushima (Japan) )
Hao,M.S. ( Univ.of Tokushima (Japan) )
Sato,H. ( Univ.of Tokushima (Japan) )
Sakai,S. ( Univ.of Tokushima (Japan) )
Osinski,M. ( Univ.of Tokushima (Japan) )
1 more
Publication title:
Optoelectronic Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3419
Pub. Year:
1998
Page(from):
7
Page(to):
15
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819428738 [0819428736]
Language:
English
Call no.:
P63600/3419
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Growth of Bulk GaN by Sublimation Method

Sakai,S., Sato,H., Sugahara,T., Naoi,Y., Kurai,S., Yamashita,K., Tottori,S., Hao,M., Wada,K., Nishino,K.

Trans Tech Publications
7 Conference Proceedings Correlation between dislocations and luminescence in GaN

Hao,M., Sugahara,T., Tottori,s., Nozaki,M., Kurai,S., Nishino,K., Naoi,Y., Sakai,S.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. …

MRS - Materials Research Society
8 Conference Proceedings Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth

Coltrin, M. E., Willan, C. C., Bartram, M. E., Han, J., Missert, N., Crawford, M. H., Baca, A. G.

MRS - Materials Research Society
3 Conference Proceedings Maskless lateral epitaxial overgrowth of GaN on sapphire

Fini, P., Marchand, H., Ibbetson, J. P., Moran, B., Zhao, L., DenBaars, S. P., Speck, J. S., Mishra, U. K.

MRS-Materials Research Society
9 Conference Proceedings GaN: From Selective Area to Epitaxial Lateral Overgrowth

Li, X., Bishop, S. G., Coleman, J. J.

MRS - Materials Research Society
4 Conference Proceedings Lateral epitaxial overgrowth for defect-free GaN substrates

Freitas,J.A.,Jr., Saparin,G.V., Nam,O-H., Zheleva,T.S., Davis,R.F.

SPIE - The International Society for Optical Engineering
10 Conference Proceedings Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Kung,P., Walker,D., Sandvik,P., Hamilton,M., Diaz,J., Lee,I.-H., Razeghi,M.

SPIE - The International Society for Optical Engineering
5 Conference Proceedings Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD

X. Ni, U. Ozgur, H. Morkoc, A. A. Baski, Z. Liliental-Weber, H. O. Everitt

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth

Wraback, M., Shen, H., Eiting, C. J., Carrano, J. C., Dupuis, R. D.

MRS-Materials Research Society
6 Conference Proceedings Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO2 nanorod-arrgy patterned sapphire substrates by MOCVD

C. H. Chiu, C. L. Chao, M. H. Lo, Y. J. Cheng, H. C. Kuo

Society of Photo-optical Instrumentation Engineers
12 Conference Proceedings Yellow Luminescence Imaging Of Epitaxial Lateral Overgrown GaN Using Ionoluminescence

Teo, E.J., Bettiol, A.A., Osipowicz, T., Hao, M.S., Chua, S.J., Liu, Y.Y.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12