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Fast-ion-induced defects in silicon studied by deep level transient spectroscopy

Author(s):
Publication title:
Materials modification by high-fluence ion beams
Title of ser.:
NATO ASI series. Series E, Applied sciences
Ser. no.:
155
Pub. Year:
1989
Page(from):
231
Page(to):
236
Pages:
6
Pub. info.:
Dordrecht, The Netherlands: Kluwer Academic Publishers
ISSN:
0168132X
ISBN:
9780792300359 [0792300351]
Language:
English
Call no.:
N11482/155
Type:
Conference Proceedings

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