Blank Cover Image

Misfit Dislocations in InxGa1-xAs/GaAs Heterostructures near the Critical Thickness

Author(s):
Publication title:
Evaluation of advanced semiconductor materials by electron microscopy
Title of ser.:
NATO ASI series. Series B, Physics
Ser. no.:
203
Pub. Year:
1989
Page(from):
395
Page(to):
402
Pages:
8
Pub. info.:
New York: Plenum Press
ISBN:
9780306433627 [0306433621]
Language:
English
Call no.:
N11479/203
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Misfit Dislocation Generation from Dissociated Threading Dislocations in Strained-Layer Heterostructures

Zou,J., Cockayne,D.J.H.

Trans Tech Publications
7 Conference Proceedings ANISOTROPIC ELECTRON MOBILITY OF TWO-DIMENSIONAL-ELECTRON-GAS IN MODULATION DOPED InXGa1-Xas/In1-Xas HETEROSTRUCTURES

Chen, Jianhui, Fernandez, J. M, Weider, H. H..

Materials Research Society
2 Conference Proceedings THE NUCLEATION AND PROPAGATION OF MISFIT DISLOCATIONS NEAR THE CRITICAL THICKNESS IN Ge-Si STRAINED EPILAYERS

Kvam, E. P., Eaglesham, D. J., Maher, D. M., Humphreys, C. J., Bean, J. C., Green, G. S., Tanner, B. K.

Materials Research Society
8 Conference Proceedings MBE GROWTH AND PROPERTIES OF Fe FILMS ON LATTICE-MATCHED InXGa1-XAs FILMS

Farrow, R. F. C., Parkin, S. S. P., Speriosu, V. S., Wilts, C. H., Beyers, R. B., Pitner, P., Woodall, J. M., Wright, S. …

Materials Research Society
3 Conference Proceedings MISFIT DISLOCATIONS AT THE CRITICAL THICKNESS FOR InGaAs/GaAs STRAINED LAYERS

Green, G.S., Tanner, B.K., Turnbull, A.G., Barnett, S.J., Emeny, M., Whitehouse, C.R.

Materials Research Society
9 Conference Proceedings The Differences Between the InyGa1-yAs/GaAs Interface and GaAs/InyGa1-yAs Interface in Superlattice over a InxGa1-xAs(x<y) Buffer Layer

Wang, X. J., Zheng, L. X., Xiao, Z. B., Zhang, Z. P., Hu, X. W., Wang, Q. M.

MRS - Materials Research Society
4 Conference Proceedings GROWTH OF GaAs, InxGa1-xAs, AND AlxGa1-xAs ON GaAs(111)B SUBSTRATES BY MOLECULAR BEAM EPITAXY

Yang,K., Schowalter, L. J., Laurich, B. K., Smith, D. L.

Materials Research Society
10 Conference Proceedings STRAIN RELIEF MERCHANISM AND NATURE OF MISFIT DISLOCATION IN GaAS/Si HETEROSTRUCTURES

Sharan, S., Narayan, J., Salerno, J.P., Fan, J.C.C.

Materials Research Society
5 Conference Proceedings A Refined Model for Threading Dislocation Filtering in InxGa1-xAs/GaAs Epitaxial Layers

MacPherson, G., Goodhew, P. J.

MRS - Materials Research Society
11 Conference Proceedings High-Quality InxGa1-xAs Heterostructures Grown on GaAs With MOVPE

Bulsara, M. T., Fitzgerald, E. A.

MRS - Materials Research Society
6 Conference Proceedings THREADING DISLOCATIONS IN InxGa1-xAs/GaAs SYSTEM

Tamura, M., Hashimoto, A., Nakatsugawa, Y.

Materials Research Society
12 Conference Proceedings An i-InGaP/n-InxGa1-xAs/i-GaAs Step-Compositioned Doped-Channel Field-Effect Transistor (SCDCFET)

Liu, W.-C., Laih, L.-W., Cheng, S.-Y., Wang, W.-C., Lin, P.-H., Chen, J.-Y., Lin, W.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12