Blank Cover Image

Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy

Author(s):
Publication title:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3899
Pub. Year:
1999
Page(from):
79
Page(to):
83
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819435019 [0819435015]
Language:
English
Call no.:
P63600/3899
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings New Metallization Scheme for Low Resistance Ohmic Contacts to P-Type GaN *

Wang, S.C., Chu, C.F, Yu, C.C., Wang, Y.K., Tsai, J.Y., Lai., atid F.I.

Electrochemical Society
7 Conference Proceedings Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor-Phase Epitaxy

Tsuchiya, H., Sunaba, K., Yonemura, S., Suemasu, T., Hasegawa, F.

MRS - Materials Research Society
2 Conference Proceedings Structural Characterization of Thick GaN Films Grown by Hydride Vapor Phase Epitaxy

Romano, L. T., Molnar, R. J., Krusor, B. S., Anderson, G. A., Bour, D. P., Maki, P.

MRS - Materials Research Society
8 Conference Proceedings Dot Pattem Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy.

Liu, W.Y., Tsay, J.D., Guo, Y.D., Liu, H.P., Yeh, R.C.

Electrochemical Society
3 Conference Proceedings Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy

Kuan, T. S., Inoki, C. K., Hsu, Y., Harris, D. L., Zhang, R., Gu, S., Kuech, T. F.

MRS-Materials Research Society
9 Conference Proceedings Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy

Safvi, S. A., Perkins, N. R., Horton, M. N., Kuech, T. F.

MRS - Materials Research Society
4 Conference Proceedings Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

Kim. S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F., Bishop, S. G.

MRS - Materials Research Society
10 Conference Proceedings GaN p-n Structures Grown by Hydride Vapor-Phase Epitaxy

Nikolaev, A. E., Melnik, Yu. V., Kuznetsov, N. I., Strelchuk, A. M., Kovarsky, A. P., Vassilevski, K. V., Dmitriev, V. …

MRS - Materials Research Society
5 Conference Proceedings Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope

Florescu, D. I., Asnin, V. A., Mourokh, L. G., Pollak, F. H., Molnar, R. J.

MRS-Materials Research Society
11 Conference Proceedings Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

Paskova, T., Svedberg, E. B., Madsen, L. D., Yakimova, R., Ivanov, I. G., Henry, A., Monemar, B.

MRS - Materials Research Society
6 Conference Proceedings Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy

Goss, S. H., Young, A. P., Brillson, L. J., Loo, D. C., Molnar, R. J.

Materials Research Society
12 Conference Proceedings Threading defect reduction in laterally overgrown GaN films by Hydride Vapor Phase Epitaxy

Doppalapudi, D., Nam, K.J., Sampath, A., Singh, Raj, Ng. H.M., Basu, S.N., Moustakas, T.D.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12