THE INFLUENCE OF IMPLANTATION-INDUCED NON-STOICHIOMETRY ON THE EPITAXIAL RECRYSTALLIZATION OF CoSi2

THE INFLUENCE OF IMPLANTATION-INDUCED NON-STOICHIOMETRY ON THE EPITAXIAL RECRYSTALLIZATION OF CoSi2

Author(s):

Publication title:

Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

320

Pub. Year:

1994

Page(from):

203

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992191 [1558992197]

Language:

English

Call no.:

M23500/320

Type:

Conference Proceedings

Details

TDL ID:	ZA00020321
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicides, germanides, and their interfaces
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

Similar Items:

1 Conference Proceedings ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF NiSi2 AND CoSi2 Ridgway, M.C., Elliman, R.G., Williams, J.S. Materials Research Society	7 Conference Proceedings Co-Acceptor Complexes in Si Bavel,A.-M.Van, Langouche,G. Trans Tech Publications
2 Conference Proceedings The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si Bavel,A.-M.Van, Degroote,S., Vantomme,A., Stesmans,A., Langouche,G. Trans Tech Publications	8 Conference Proceedings In Search of Co-Acceptor Pairs in Highly Doped p-Si:A Mossbauer Spectroscopy Study Bavel,A,-M.Van, Langouche,G. Trans Tech Publications
3 Conference Proceedings Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers Bender, H., Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G. MRS - Materials Research Society	9 Conference Proceedings LASER INDUCED EPITAXIAL CoSi2 FORMATION Comrie, C. M., Hoffman, V. MRS - Materials Research Society
4 Conference Proceedings Solid-Phase Epitaxial Growth of Amorphized GaAs: The Influence of Microscopic and Macroscopic Non-Stoichiometry Belay, K. B., Llewellyn, D. J., Ridgway, M. C. MRS - Materials Research Society	10 Conference Proceedings High Quality GdSi1.7 Layers Formed by High Dose Channeled Implantation Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G., Bender, H. MRS - Materials Research Society
5 Conference Proceedings Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi2 Synthesis Silva, M. R. da, Melo, A. A., Soares, J. C., Silva, M. F. da, Moons, R., Langouche, G., Vantomme, A., Conde, O., Lu, … MRS - Materials Research Society	11 Conference Proceedings Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation Langouche,G., Wu,M.F., Wachter,J.De, Pattyn,H., Bavel,A.-M.Van Trans Tech Publications
6 Conference Proceedings The Influence of Non-Stoichiometry on the Electrical Activation of n-Type Dopants in InP Ridgway, M. C., Johnson, C. M., Kringhoj, P. MRS - Materials Research Society	12 Conference Proceedings Effects of Growth Parameters on the Epitaxy of CoSi2/Si(100) Formed by Reactive Deposition Epitaxy Vantomme, Andre, Degroote, Stefan, Dekoster, Johan, Bender, Hugo, Langouche, Guido MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12