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SILICIDED P-N JUNCTION DIODES FABRICATED BY SILICIDATION THROUGH SILICON BUFFER LAYER AND DOPANT DRIVE-OUT PROCESS

Author(s):
Publication title:
Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
320
Pub. Year:
1994
Page(from):
47
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992191 [1558992197]
Language:
English
Call no.:
M23500/320
Type:
Conference Proceedings

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