Removal of SiO2 from Si(100) by Remote H2/SiH4 Plasma Prior to Epitaxial Growth

Removal of SiO2 from Si(100) by Remote H2/SiH4 Plasma Prior to Epitaxial Growth

Author(s):

Publication title:

Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

386

Pub. Year:

1995

Page(from):

351

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992894 [1558992898]

Language:

English

Call no.:

M23500/386

Type:

Conference Proceedings

Details

TDL ID:	ZA00020319
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ultraclean semiconductor processing technology and surface chemical cleaning and passivation
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.19

Similar Items:

1 Conference Proceedings RIE Passivation Layer Removal by Remote H-Plasma and H2/SiH4 Plasma Processing Ying, Hong, Barnak, J. P., Chen, Y. L., Nemanich, R. J. MRS - Materials Research Society	7 Conference Proceedings PLASMA SURFACE INTERACTIONS AND SURFACE PRORERTIES FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T. P., Cho, J., Chen, Y. L., Maher, D. M., Nemanich, R. J. MRS - Materials Research Society
2 Conference Proceedings Removal of Fluorine from a Si(100) Surface by a Remote rf hydrogen Plasma Barnak, J. P., King, S., Montgomery, J., Ku, Ja-Hum, Nemanich, R. J. MRS - Materials Research Society	8 Conference Proceedings Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF … Yasuda, T., Ma, Y., Habermehl, S., Kim, S.S., Lucovsky, G., Schneider, T.P., Cho, J., Nemanich R.J. Materials Research Society
3 Conference Proceedings REDUCTION OF SURFACE ROUGHENING AND SUBSURFACE DEFECTS IN H-PLASMA CLEANING OF Si (100) Schneider, T.P., Montgomery, J.S., Ying, H., Barnak, J.P., Chen, Y.L., Maher, D.M., Nemanich, R.J. Electrochemical Society	9 Conference Proceedings A STUDY OF SURFACE AND SUBSURFACE PROPERTIES OF Si(100) AFTER HYDROGEN ION-BEAM EXPOSURE Liu, H. X., Schneider, T. P., Montgomery, J., Chen, Y. L., Buczkowski, A., Shimura, F., Nemanich, R. J., Maher, D. M., … MRS - Materials Research Society
4 Conference Proceedings Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation Montgomery, J. S., Barnak, J. P., Silvestre, C., Hauser, J. R., Nemanich, R. J. MRS - Materials Research Society	10 Conference Proceedings Deposition of SiO2 by Remote Plasma CVD with SiH4-N2O Rhee, S.-W., Park, Y.-B., Kang, J.-K. American Institute of Chemical Engineers
5 Conference Proceedings HYDROGEN PLASMA CLEANING PRIOR TO LOW TEMPERATURE GATE OXIDE DEPOSITION IN CLUSTER FABRICATED MOSFETs Montgomery, J.S., Barnak, J.P., Bayoumi, A., Hauser, J.R., Nemanich, R.J. Electrochemical Society	11 Conference Proceedings Ex Situ and In Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces King, Sean W., Smith, Laura L., Barnak, John P., Ku, Ja-Hum, Christman, Jim A., Benjamin, Mark C., Bremser, Michael D., … MRS - Materials Research Society
6 Conference Proceedings PLASMA-SURFACE INTERACTION LIMITS FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T.P., Bernhard, B.L., Chen, Y.L., Nemanich, R.J. Materials Research Society	12 Conference Proceedings Epitaxial growth of FeSi2 on (111)Si Cheng, H. C., Chen, L. J., Your, T. R. North-Holland

1

2

3

4

5

6

7

8

9

10

11

12