Blank Cover Image

Ultrathin Silicon Oxide and Nitride - Silicon Interface States

Author(s):
Publication title:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
567
Pub. Year:
1999
Page(from):
549
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
Language:
English
Call no.:
M23500/567
Type:
Conference Proceedings

Similar Items:

Schafer, J., Young, A. P., Brillson, L. J., Niimi, H., Lucovsky, G.

MRS - Materials Research Society

Ma, Y., Hattangady, S. V., Yasuda, T., Niimi, H., Gandhi, S., Lucovsky, G.

MRS - Materials Research Society

Hattangady, S. V., Niimi, H., Gandhi, S., Lucovsky, G.

MRS - Materials Research Society

Niimi, H., Koh, K., Lucovsky, G.

Electrochemical Society

Yang, H., Niimi, H., Wu, Y., Lucovsky, G.

MRS - Materials Research Society

Koh, K., Niimi, H., Lucovsky, G.

MRS - Materials Research Society

Niimi, H., Koh, K., Lucovsky, G.

MRS - Materials Research Society

Koh, K., Niimi, H., Lucovsky, G.

Electrochemical Society

Goss, S. H., Young, A. P., Brillson, L. J., Loo, D. C., Molnar, R. J.

Materials Research Society

Lucovsky, G.

MRS - Materials Research Society

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12