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Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation

Author(s):
Hobbs, C.
Hegde, R.
Maiti, B.
Nagabushnam, R.
La, L.
Reid, K.
Dip, A.
Grove, L.
Conner, J.
Kaushik, V.
Prabhu, L.
Anderson, A.
Bagchi, S.
Mendonca, J.
Tobin, P.
10 more
Publication title:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
567
Pub. Year:
1999
Page(from):
379
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
Language:
English
Call no.:
M23500/567
Type:
Conference Proceedings

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