Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc From Silicon

Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc From Silicon

Author(s):

Publication title:

Diffusion mechanisms in crystalline materials : symposium held April 13-16, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

527

Pub. Year:

1998

Page(from):

395

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994331 [1558994335]

Language:

English

Call no.:

M23500/527

Type:

Conference Proceedings

Details

TDL ID:	ZA00020315
Series ID:	PA00000011
Conf. info. (Name):	Symposium on diffusion mechanisms in crystalline materials
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.16

Similar Items:

1 Conference Proceedings Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc From Silicon Giese, A., Bracht, H., Walton, J. T., Stolwijk, N. A. MRS - Materials Research Society	7 Conference Proceedings Phonon Spectroscopy of Defects Correlated with the Diffusion of Zn into Si Staiger,J., Gross,P., Lassmann,K., Bracht,H., Stolwijk,N.A. Trans Tech Publications
2 Conference Proceedings EQUILIBRIUM CONCENTRATIONS OF INTRINSIC POINT DEFECTS IN SILICON DETERMINED BY ZINC DIFFUSION Bracht, H., Stolwijk, N.A., Mehrer, H. Electrochemical Society	8 Conference Proceedings Zinc and Sulphur in Silicon:Experimental Evidence for Kick-Out Diffusion Behaviour Stolwijk,N.A., Grunebaum,D., Perret,M., Brohl,M. Trans Tech Publications
3 Conference Proceedings Vacancy-mediated interstitial-substituitional diffusion in semiconducting and metallic matrices Stolwijk. A. N, Wenwer. F, Bracht. H, Mehrer. H Kluwer Academic Publishers	9 Conference Proceedings Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing N. Stolwijk, L. Lerner, A. Giese, W. Lerch Trans Tech Publications
4 Conference Proceedings Thermodynamic Properties of Self-Interstitials in Silicon:An Experimental Investigation Bracht,H., Stolwijk,N.A., Mehrer,H. Trans Tech Publications	10 Conference Proceedings THE INFLUENCE OF DISLOCATIONS ON THE DIFFUSION BEHAVIOR OF GOLD IN SILICON Stolwijk, N. A., Holzl, J. Materials Research Society
5 Conference Proceedings Modeling of Boron Diffusion in Silicon Carbide Bracht, H., Stolwijk, N.A., Laube, M., Pensl, G. Trans Tech Publications	11 Conference Proceedings Observation of Vacancies during Zn Diffusion in GaP Krause-Rehberg, R., Bondarenko, V., Poepping, J., Stolwijk, N.A., Staab, T.E.M., Soedervall, U. Trans Tech Publications
6 Conference Proceedings Modelling of the Surface Annihilation of Excess Self-Interstitials Generated by Gold Diffusion into Silicon Stolwijk, N. A., Lerch, W., Giese, A. MRS - Materials Research Society	12 Conference Proceedings Defect Injection and Diffusion in Semiconductors Stolwijk,N.A., Bracht,H., Hettwer,H.-G., Lerch,W., Mehrer,H., Rucki,A., Jager,W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12