Applicability of Shallow-Impurity-Doped Silicon to Proton Flux Sensors Using Stable Particle-Induced Conductivity

Applicability of Shallow-Impurity-Doped Silicon to Proton Flux Sensors Using Stable Particle-Induced Conductivity

Author(s):

Publication title:

Semiconductors for room-temperature radiation detector applications II : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

487

Pub. Year:

1997

Page(from):

423

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993921 [1558993924]

Language:

English

Call no.:

M23500/487

Type:

Conference Proceedings

Details

TDL ID:	ZA00020311
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductors for room-temperature radiation detector applications
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.05

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