Improved CdZnTe Detectors Grown by Vertical Bridgman Process
- Author(s):
- Publication title:
- Semiconductors for room-temperature radiation detector applications II : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 487
- Pub. Year:
- 1997
- Page(from):
- 229
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993921 [1558993924]
- Language:
- English
- Call no.:
- M23500/487
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
7
Conference Proceedings
Control of Defects and Impurities in Production of CdZnTe Crystals by the Bridgman Method
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
3
Conference Proceedings
Semi-insulating CdZnTe with improved structural perfection for radiation detector applications
SPIE-The International Society for Optical Engineering |
9
Conference Proceedings
Performance improvement of CdZnTe detectors using modified two-terminal electrode geometry
SPIE - The International Society for Optical Engineering |
4
Conference Proceedings
Study on Tellurium Precipitates in CdZnTe Crystals Grown by Seeded Vertical Bridgman Method
Electrochemical Society |
10
Conference Proceedings
Characterization of CZT detectors grown from horizontal and vertical Bridgman
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
11
Conference Proceedings
Radiation detector performance of CdTe single crystals grown by the conventional vertical Bridgman technique
SPIE - The International Society for Optical Engineering |
6
Conference Proceedings
Control of Defects and Impurities in Production of CdZnTe Crystals by the Bridgman Method
MRS - Materials Research Society |
Materials Research Society |