Effects of Cu and Si Dopants on Electromigration Mass Transport in Al Interconnects for VLSI

Effects of Cu and Si Dopants on Electromigration Mass Transport in Al Interconnects for VLSI

Author(s):

Lee, C. H.

Publication title:

Polycrystalline thin films II : structure, properties, and applications : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

403

Pub. Year:

1996

Page(from):

507

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993068 [1558993061]

Language:

English

Call no.:

M23500/403

Type:

Conference Proceedings

Details

TDL ID:	ZA00020303
Series ID:	PA00000011
Conf. info. (Name):	Symposium on polycrystalline thin films
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.12.01

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