The Use of Disordered Interlayers to Enhance Nucleation of Silicon Nitride during Chemical Vapor Deposition

The Use of Disordered Interlayers to Enhance Nucleation of Silicon Nitride during Chemical Vapor Deposition

Author(s):

Publication title:

Polycrystalline thin films II : structure, properties, and applications : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

403

Pub. Year:

1996

Page(from):

107

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993068 [1558993061]

Language:

English

Call no.:

M23500/403

Type:

Conference Proceedings

Details

TDL ID:	ZA00020303
Series ID:	PA00000011
Conf. info. (Name):	Symposium on polycrystalline thin films
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.12.01

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