TEMPERATURE DEPENDENT EMISSIVITY MEASUREMENTS OF Si, SiO2/Si, AND HgCdTe

TEMPERATURE DEPENDENT EMISSIVITY MEASUREMENTS OF Si, SiO2/Si, AND HgCdTe

Author(s):

Ravindra, N. M.

Publication title:

Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

342

Pub. Year:

1994

Page(from):

431

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992429 [1558992421]

Language:

English

Call no.:

M23500/342

Type:

Conference Proceedings

Details

TDL ID:	ZA00020298
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal and integrated processing
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

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