IN-SITU MULTIPROCESSING OF ULTRATHIN SILICON NITRIDE CAPACITORS FOR ADVANCED DRAM CELLS

IN-SITU MULTIPROCESSING OF ULTRATHIN SILICON NITRIDE CAPACITORS FOR ADVANCED DRAM CELLS

Author(s):

Thakur, R. P. S.

Publication title:

Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

342

Pub. Year:

1994

Page(from):

195

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992429 [1558992421]

Language:

English

Call no.:

M23500/342

Type:

Conference Proceedings

Details

TDL ID:	ZA00020298
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal and integrated processing
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

Similar Items:

1 Conference Proceedings ADVANCED DRAM CELL DIELECTRIC FILMS USING RAPID THERMAL PROCESSING Thakur, R. P. S., Mathews, V. K., Fazan, P. C. MRS - Materials Research Society	7 Conference Proceedings Barium Strontium Titanate Capacitors for Embedded DRAM Zurcher, P., Tracy, C. J., Jones, R. E., Jr., Alluri, P., Chu, P. Y., Jiang, B., Kim, M., Melnick, B. M., Raymond, M. … MRS - Materials Research Society
2 Conference Proceedings Capacitor Dielectrics For Advanced Dram Applications Mathews, V.K., Fazan, P.C. Electrochemical Society	8 Conference Proceedings Recent Developments In Ultrathin Oxynitride And Oxide/Nitride Stacked Films Prepared By In-Situ RTP Multiprocessing Bhat, M., Yoon, G.W., Kim, J., Han, L,K., Yan, J., Wristers, D., Kwong, D.L. Electrochemical Society
3 Conference Proceedings INFLUENCE OF SURFACE PREPARATION PRIOR TO THERMAL NITRIDATION ON THE ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS DEPOSITED ON POLYCRYSTALLINE SILICON … Mathews, Viju K., Thakur, Randhir P.S., Ditali, Akram, Fazan, Pierre C. Materials Research Society	9 Conference Proceedings EFFECT OF PROCESSING CONDITIONS ON THE SURFACE MORPHOLOGY OF THIN POLYSILICON FILMS USED FOR DRAM CELL CAPACITORS Mathews, Viju K. Materials Research Society
4 Conference Proceedings Advanced DRAM Capacitors Using Tantalum Pentoxide Process Technology Thakur, R.P.S., DeBoer, S.J., AI-Shareef, H.N., Gealy, D., Schuegraf, K., Singh, R. Electrochemical Society	10 Conference Proceedings Rapid Thermal Processing-Manufacturing Perspective Thakur, R. P. S., Schuegraf, K., Fazan, P., Rhodes, H., Zahorik, R. MRS - Materials Research Society
5 Conference Proceedings Highly manufacturable capacitor-less 1T-DRAM concept(Invited Paper) Fazan, P.C., Okhonin, S., Nagoga, M., Sallese, J.M. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Extending the Use of NO Dielectrics for DRAM by Ultrathin Silicon Nitride RTCVD With In Situ Ammonia and Hydrogen Predeposition Surface Conditioning Tiner, Paul A., Khamankar, Rajesh B., Johnston, Clark D., Park, Song C., Pas, Michael F., Violette, Katherine E., Wise, … MRS - Materials Research Society
6 Conference Proceedings In-Situ H2 Pretreatment An Thermal Nitridation For Ultrathin Silicon Nitride Capacitors Kuramae, M., Hataishi, O., Mieno, P., Nakamura, M., Suzuki, Y., Nomura, H., Shimizu, A., Furumura, Y. Electrochemical Society	12 Conference Proceedings DEMONSTRATION OF MULTIPROCESSING BY SILICON EPITAXY FOLLOWING IN-SITU CLEANING Apte, Pushkar P., Venkatraman, Ramnath, Saraswat, Krishna C., Moslehi, Mehrdad M., Yeakley, Richard Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12