Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime

Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime

Author(s):

Arthur,G.G. ( Rutherford Appleton Lab. )
Martin,B.
Mack,C.A.

Publication title:

Advances in resist technology and processing XIV : 10-12 March 1997, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3049

Pub. Year:

1997

Page(from):

189

Page(to):

200

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819424631 [0819424633]

Language:

English

Call no.:

P63600/3049

Type:

Conference Proceedings

Details

TDL ID:	ZA00020295
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	1997 : 14th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1997.03.10-1997.03.12

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